Qingcheng Semiconductor: Significant breakthrough in "one furnace, multiple ingots, anti parallel fl

In the key stage of preparing silicon carbide single crystal materials, domestic forces have once again achieved a milestone breakthrough. Recently, Suzhou Qingcheng Semiconductor Technology Co., Ltd. announced significant progress in its joint research and development with Tsinghua University on the "Liquid Phase Method One Furnace Multi Ingot Anti Parallel Flow Growth Technology". It has achieved stable and synchronized growth of four P-type silicon carbide crystals, marking the company as the world's first semiconductor enterprise to master this technology and filling the technical gap in the large-scale growth of liquid phase silicon carbide crystals in multiple ingots.

Weijing Energy Storage's VP product: Breaking through the limitations of duration and defining a new

Weijing Energy Storage announced the upcoming launch of the VP series zinc-iron flow battery products. This series belongs to the capacity-type energy storage, namely long-duration energy storage products. The products have the ability to discharge continuously for 4-6 hours or longer, satisfying the diverse needs of the power generation side, grid side, and user side with all-scenario adaptive technology. This effectively solves the problem of excess new energy during the noon and insufficient consumption at night. It promotes the growth of energy storage from an auxiliary role to a key support for the new power system, injecting strong momentum into the construction of a clean, efficient, and safe energy system with long-duration energy storage.

Tianyue Advanced and Shunyuao have reached a strategic cooperation agreement

On July 15th, according to the official WeChat account of Tianyue Advanced, Shunyu Aolai has reached a strategic cooperation agreement with Tianyue Advanced on July 14th, opening a new chapter of cooperation between the two leading enterprises in the fields of micro nano optics and new materials. As two important enterprises in the industry, the joint efforts of both parties will inject new vitality into the application expansion and industrial upgrading of SiC technology