2025-05-28
【 Patent 】 Tianke Heda | High purity semi insulating silicon carbide single crystal process
The existing preparation process of high-purity semi insulating silicon carbide crystals involves the elimination of impurities in the vacuum chamber before growth, as well as the use of atmospheres such as H2, Cl2, CH4, H2S to remove nitrogen, boron, and other impurities during the growth process. By using a molecular pump for long-term extreme vacuum pumping at room temperature, the back bottom vacuum can reach 10-5 Pa, which can effectively remove free nitrogen gas. However, there are still some residual impurities, such as those adsorbed on porous insulation felt and graphite parts, which are difficult to remove. How to find a suitable way to better remove impurities from the growth chamber and improve the crystal quality of the grown silicon carbide?