World First! China's Jiufengshan Laboratory makes new breakthroughs in gallium nitride materials

According to the news from Jiufengshan Laboratory on March 22, the research team of Jiufengshan Laboratory has achieved the world's first preparation of 8-inch silicon-based nitrogen polar gallium nitride (N-polar GaNOI) high electron mobility material. This achievement not only marks a significant progress in the field of semiconductor materials in China, but also lays a solid foundation for the development of many cutting-edge technologies in the future.

Australia strives to catch up with the development of China's vanadium battery industry

With its abundant vanadium reserves, Australia originally thought it could use local technology to accelerate the development of vanadium flow batteries (VRFBs). But now, with China vigorously promoting vanadium battery projects and major builders actively participating in global expansion, Australia has become a "renewable energy superpower" and its ambition to reduce dependence on China's supply chain has once again been hit hard. The article sighed and said, "All of this is like a replay of history: Australia was the first to develop photovoltaic cells for solar panels, but China quickly dominated this field

The Current Status and Future Prospects of Silicon Carbide Crystal Growth Technology

Silicon carbide (SiC), as a wide bandgap semiconductor material, is widely used in various fields such as new energy vehicles, 5G communication, photovoltaics, and smart grids due to its excellent physical properties. Currently, the growth technology of silicon carbide crystals is rapidly developing and gradually becoming one of the core technologies in the semiconductor industry. This article will explore the challenges and technological breakthroughs in current SiC crystal growth technology, as well as future technological directions.