12 inch silicon carbide substrate is planned to enter the CoWoS packaging field in two stages

After two years of price decline and slowing commercialization in the 8-inch silicon carbide wafer market, the industry is placing new hopes on advanced packaging technology for AI chips. Industry sources say that 12 inch silicon carbide substrates are being explored for TSMC's CoWoS architecture, which is expected to open up a higher value market beyond the fields of electric vehicles and solar energy.

Chuancheng Energy Storage and Beiguan District of Anyang City Negotiate for Cooperation in the Vanad

According to Global Flow Battery Network, on October 12th, Qin Ruiguang, member of the Standing Committee of Beiguan District Committee, Minister of Propaganda, and Deputy District Chief of Anyang City, Henan Province, visited Shaanxi Chuancheng Energy Storage Technology Co., Ltd. for research and investigation. Both sides conducted in-depth exchanges on topics such as the development of vanadium flow energy storage technology and industrial cooperation

Overview of growth and processing flow of silicon carbide substrate

As a typical representative of third-generation semiconductor materials, silicon carbide is an ideal material for producing high-voltage, high-frequency, and high-power devices due to its performance advantages such as wide bandgap, high thermal conductivity, high breakdown electric field, and high electron migration rate. It can effectively break through the physical limits of traditional silicon-based power semiconductor devices and is known as a green energy material that drives the "new energy revolution". In the production and manufacturing process of power devices, the growth and processing of silicon carbide single crystal substrates are key links that determine performance and yield. Below is a brief overview of their growth and processing processes: