1、 Tianyue Advanced: Winning the Gold Award at the Japan Semiconductor Annual Awards

Recently, the 31st Semiconductor of the Year 2025 award ceremony was held in Tokyo, Japan. Tianyue Advanced, a leading silicon carbide substrate material enterprise in China, stood out from many strong competitors around the world and won the "Semiconductor Electronic Materials" gold award from the authoritative Japanese semiconductor media "Electronic Device Industry News".

This time, Tianyue Advanced has won this international honor, not only creating the first record of Chinese enterprises winning this award in its 31 year history, but also pioneering the first time that the highest honor has been awarded to the field of silicon carbide substrate materials in this award.

The Semiconductor Annual Award has always been known for its strict selection criteria and high industry recognition. In the past, internationally renowned companies such as NVIDIA, Sony, Micron, Toshiba, and Sumitomo Electric have won this award. The award of Tianyue Advanced fully demonstrates that its silicon carbide substrate material technology has reached the world's leading level.

Tianyue Advanced has been committed to the in-depth research and development of silicon carbide substrate material technology for a long time, and has made significant breakthroughs in material crystal growth technology, crystal defect control, processing technology, etc. Especially in the preparation of large-sized and high-quality crystals, it has overcome key technical difficulties, providing solid support for industrial applications.

2、 Supercore Star: HTCVD silicon carbide crystal growth technology won the gold medal at the Geneva International Invention Exhibition

At the 50th Geneva International Invention Exhibition, Jiangsu Chaoxinxing Semiconductor Co., Ltd. won the gold medal with its independently developed advanced silicon carbide crystal growth technology (HTCVD). This award further highlights the technological leadership of Supercore Star in the field of third-generation semiconductors.

Chaoxinxing focuses on independent research and development of the entire industry chain of silicon carbide materials. The team has overcome multiple key technical challenges such as low stress crystal growth, low defect crystal processing, and low loss chip preparation, successfully achieving independent control of the entire process from equipment, powder to crystal growth, processing, and testing.

HTCVD (High Temperature Chemical Vapor Deposition) is one of the internationally recognized advanced silicon carbide crystal growth technologies, which has the advantages of continuous and stable feeding, high-purity crystal production, and efficient growth rate, greatly promoting the scale and high-quality development of the silicon carbide industry. As one of the only three companies in the world and the only one in China to master this innovative technology, Chaoxinxing has become one of the few international companies that can supply high-quality silicon carbide substrate sheets in bulk.